IONISATION PAR CHOCS DANS UNE STRUCTURE N-I-P A BANDE VARIABLEARUTYUNYAN VM; PETROSYAN SG.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 10; PP. 2001-2006; BIBL. 13 REF.Article

SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES.ROSEN A; SWARTZ GA; DUIGON FC et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 680-682; BIBL. 5 REF.Article

Transient current changes induced in pin-diodes by nanosecond electron pulsesLEONHARDT, J. W; GOLDNER, R; BOS, J et al.Radiation physics and chemistry. 1984, Vol 24, Num 5-6, pp 591-592, issn 0146-5724Article

RAMP RECOVERY IN P-I-N DIODESBERZ F.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 783-792; BIBL. 9 REF.Article

GET BACK TO BASICS WITH STEPS ATTENUATOR DESIGNANANASSO F.1979; MICROWAVES; USA; DA. 1979; VOL. 18; NO 2; PP. 76-81; (4 P.); BIBL. 10 REF.Article

INFLUENCE DE L'IRRADIATION NEUTRONIQUE ET DU RECUIT SUR LES CARACTERISTIQUES DES STRUCTURES P-I-NKORSHUNAW FP; KAZHEHKYI TV.1977; VESCI AKAD. NAVUK B.S.S.R., FIZ. MAT. NAVUK; S.S.S.R.; DA. 1977; NO 4; PP. 95-99; BIBL. 6 REF.Article

ELECTROLUMINESCENCE IN AMORPHOUS SILICON P-I-N JUNCTIONSNASHASHIBI TS; AUSTIN IG; SEARLE TM et al.1982; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 6; PP. 553-571; BIBL. 17 REF.Article

THE RESONANT MODE PIN SWITCHCHAFFIN RJ.1980; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1980; VOL. 23; NO 12; PP. 33-36; BIBL. 5 REF.Article

STEP RECOVERY OF P-I-N DIODESBERZ F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 927-932; BIBL. 14 REF.Article

Bruit de mode transverse d'une diode P.I.N = Transversal mode noise of a P.I.N. diodeBLANC, F; FANGUIN, R; RAOULT, G et al.Annales françaises des microtechniques et de chronométrie. 1984, Vol 38, Num 1-4, issn 0294-1228, non pagArticle

Field-drifting resonance tunneling through a-Si:H/a-Si_1-xC_x:H double barrier in the p-i-n-structureJIANG, Y. L; HWANG, H. L.Japanese journal of applied physics. 1988, Vol 27, Num 12, pp L2434-L2437, issn 0021-4922, 2Article

Equivalence of electrons and holes in a-Si p-s-n diodesKUSIAN, W; PFLEIDERER, H; BULLEMER, B et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 5220-5224, issn 0021-8979Article

Zuverlässiger Zweiwegeschalter mit PIN-Dioden = Un commutateur fiable à deux voies avec des diodes à couche intrinsèque = Reliable two-way switch with PIN diodesMICHLER, E.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 2, pp 49-50, issn 0323-4657Article

DETERMINATION OF THE CARRIER LIFETIME FROM THE OPEN-CIRCUIT VOLTAGE DECAY OF P-I-N RECTIFIERS AT HIGH-INJECTION LEVELSMOHAMED JAMELEDDINE BEN HAMOUDA; GERLACH W.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 6; PP. 953-955; BIBL. 6 REF.Article

P-I-N DIODES FOR LOW-FREQUENCY HIGH-POWER SWITCHING APPLICATIONSCAULTON M; ROSEN A; STABILE PJ et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 6; PP. 875-882; BIBL. 9 REF.Article

A LONG-WAVE LENGTH, ANNULAR IN⁰,53)GA⁰,47)AS P-I-N PHOTODETECTIONFORREST SR; KOHL PA; PANOCK R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 415-417; BIBL. 8 REF.Article

LOW-VOLTAGE P-I-N DETECTOR PACKAGED FOR FIBER OPTICSHAWKINS BM; SPEER RS.1980; I.E.E.E. TRANS. COMPON. HYBR. MANUFG TECHNOL.; USA; DA. 1980; VOL. 3; NO 4; PP. 485-488; BIBL. 4 REF.Article

THE OPTICAL (FREE-CARRIER) ABSORPTION OF A HOLE-ELECTRON PLASMA IN SILICONHORWITZ CM; SWANSON RM.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1191-1194; BIBL. 13 REF.Article

SWITCHING PHENOMENA IN REVERSE-BIASED GOLD-DIFFUSED SILICON P⁺-I - N⁺ DIODESSUPADECH S; HENG T.1979; PROC. I.E.E.E.; USA; DA. 1979; VOL. 67; NO 4; PP. 692-693; BIBL. 2 REF.Article

NUMERICAL SIMULATION OF A FORWARD-BIASED P-I-N STRUCTURE WITH BAND-TO-BAND AUGER RECOMBINATIONFREIDIN B; VELMRE E.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 22; PP. 701-703; BIBL. 16 REF.Article

CONTRIBUTION A L'ETUDE DE DEPHASEURS A SEMI-CONDUCTEURS EN BANDE MILLIMETRIQUE.AICARDI G.1977; TOULOUSE; EC. NATL. SUPER. AERONAUT. ESP.; DA. 1977; PP. 1-147; BIBL. 4 P.; (THESE DOCT. ING.; EC. NATL. SUPER. AERONAUT. ESPACE TOULOUSE)Thesis

CINETIQUE DE REPONSE D'UNE PHOTODIODE LORS DU PARCOURS DES PORTEURS DANS LA REGION DE LA CHARGE D'ESPACEYUNGERMAN VM; TRISHENKOV MA.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 6; PP. 1228-1238; BIBL. 9 REF.Article

DOUBLE-INJECTION CURRENTS IN ZN-COMPENSATED SILICON P-I-N STRUCTURES.KARAGEORGY ALKALAEV PM; KARIMOVA IZ; KNIGIN PI et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 1; PP. 391-395; ABS. RUSSE; BIBL. 17 REF.Article

THE I-V CHARACTERISTIC OF A LARGE-AREA SILICON PIN DIODE, OPERATING IN THE TOTAL-DEPLETION CONDITION.KLIMANOV YE A; KULYMANOV AV; LISEYKIN VP et al.1976; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1976; VOL. 21; NO 9; PP. 105-111; ABS. FR.; BIBL. 9 REF.Article

BORON DIFFUSION IN SILICON USING BORON NITRIDE WAFERS. = DIFFUSION DU BORE DANS LE SILICIUM EN UTILISANT DES WAFERS AU NITRURE DE BOREKORDE RS; METHA RS; HASAN MM et al.1976; J. INST. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1976; VOL. 22; NO 3; PP. 145-146; BIBL. 8 REF.Article